EDN - December 26, 2002

With 1T-SRAM-Q, MoSys builds on the cell-shrinking foundations of the technology's IT-SRAM-R predecessor (see "Memory advancements yield high reliability, better performance," EDN, Feb 21, 2002, pg 14). This time around, the company has not only reduced the size of each DRAM-derived cell's capacitor, but also given the capacitor a 3-D "bend" to shrink its planar footprint.

• Leading Edge
• Architecture provides integrated flow for nanometer designs