EDN logo


Design Ideas: June 9, 1994

Precision clamp recovers in nanoseconds

Steven D Roach,
Kaman Instrumentation, Colorado Springs, CO


High-speed ADCs sometimes place very strict limits on their allowable input-voltage range, limits that generally require the use of input clamps. Some applications require very temperature-stable clamps that don't interfere with the speed of a 50-MHz amplifier. Fig 1 shows one such circuit that clamps positive-going voltages to 1.25V at 10 mA, and you can easily adapt it for negative-going voltages and different voltage and current levels. Recovery from the clamped state occurs in about 1 nsec.

This circuit improves on the conventional diode clamp in three major areas. First, the clamping voltage drifts at only a fraction of the -2 mV/C figure of a simple diode clamp. For even lower drift, you can replace the transistors with a monolithic matched pair. Second, by using the emitter of a transistor as the clamping element, the circuit easily obtains a low clamping impedance over a very wide range of frequencies. Third, Q1 recovers from the clamped state much faster than does a PN junction diode because there is no excess charge storage.

The op amp in the reference-circuit servo controls Q2 to establish 1.25V at the emitter while carrying exactly 10 mA. The circuit also applies the base voltage of Q2 to Q1. Assuming reasonable matching of the transistors, Q1 clamps VOUT at exactly 1.25V when the clamp reaches 10 mA. This occurs when VIN reaches 2V. (Transistor base currents are assumed negligible in this analysis.) The 47-pF capacitors reduce the clamping impedance of Q1 at high frequencies.

You can easily modify the clamping voltage and current by changing VCLAMP and RBIAS. The circuit can clamp negative-going voltages using NPN transistors in place of Q1 and Q2 and changing the supply-voltage polarity. You can combine NPN- and PNP-based clamping circuits for precision clamping in both directions. When using this circuit, be sure to consider the emitter breakdown voltage of Q1. (DI #1445)


| EDN Access | feedback | subscribe to EDN! |
| design features | design ideas |


Copyright © 1995 EDN Magazine. EDN is a registered trademark of Reed Properties Inc, used under license.