Out in Front: January 4, 1996

Two new power MOSFET families from International Rectifier use the company’s fifth-generation HEXFET process to reduce on-resistance (R_DSON) by 65% or more compared to devices of comparable size. Lower on-resistance (R_DSON) in power MOSFETs is the critical specification for increasing efficiency and minimizing losses.

The devices work in motor drives, power supplies, lighting ballasts, and other applications beyond the power range of conventional transistors. The first family features MOSFETs in TO-220 packages. A 55V device, the N-channel IRF3205 costs $4.32 (1000) and has an 8-mOhm R_DSON. The 30V IRL3803 ($4.97) features a 6-mOhm R_DSON. The 55V P-channel IRF4905 ($5.18) offers 20-mOhm R_DSON, compared to 140 mOhm for its predecessor.

The other family has devices in SO-8 surface-mount packages. The IRF7413 ($2.19) is a 30V N-channel device with 11-mOhm R_DSON. The complementary P-channel device, the IRF7416 ($2.50), features 20-mOhm R_DSON.
-- by Bill Schweber

International Rectifier, El Segundo, CA. (310) 252-7100