Out in Front: July 18, 1996
Reduced-resistance MOSFETs lower dissipation
By
using a new trench process that forms channels on vertical walls in the silicon,
Philips Semiconductor has produced power MOSFETs with worst-case RDS(ON)
as low as 8 m(ohm), compared to the 20-m(ohm) value of existing devices. The
resultant devices in the BUK95 family feature lower heat dissipation for a given
die size or higher current capability in an existing package size. In some
designs, these MOSFETs eliminate the need to use two devices that connect in
parallel to achieve low on-resistance. The MOSFETs are designed for loads as
high as 55V, such as those in automotive and battery-powered applications; the
devices also have 2-kV ESD protection.
The first four available members of the family offer worst-case RDS(ON)
values of 8, 14, 18, and 24 m(ohm). The BUK9508-55A, an 8-m(ohm) part, has a
typical gate-source threshold voltage of 1.5V and costs $1.70 (100,000). All
devices come in SOT223 and SOT404 surface-mount packages (equivalent to a
D2PAK).
—by Bill Schweber
Philips Semiconductors, Sunnyvale, CA. (800) 447-1500, ext, 1300,
http://www.semiconductors. philips.com/ps/. Circle No. 496
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