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High-density FRAM: ready for prime time

  Working from a 1992 joint-technology agreement with Ramtron International (Colorado Springs, CO), Hitachi has developed a 32k3 8-bit M71V832 ferroelectric RAM (FRAM). Ramtron owns the ferroelectric technology in which cells are polarized every read or write cycle, and Hitachi’s expertise lies in manufacturing.

  The 256-kbit FRAM runs on 3V and has a 150-nsec access time, a 235-nsec byte-write time, a 1012 read/write-cycle lifetime, and 30-mA active and 25-mA standby power consumption. The M71V832 comes in a 28-pin package and uses an SRAM-like pinout. The part offers 15-nsec glitch protection in the WE# signal to help with accidental writes. It also uses an EEPROM-style, 4-kbyte-granularity block-protection scheme. Price is $9 (1000).—by Markus Levy

  Hitachi America, Brisbane, CA. (800) 285-1601, ext 13, http://www.hitachi.com.



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