| Figure
1 |
 |
| Although the
differences between the vertical structure of a
power MOSFET (a) and that of an IGBT (b) are
small, these differences have a major effect on
the devices' characteristics. For instance, the
n-type substrate of power MOSFETs and p-type
substrate of IGBTs result in a difference of RDS(ON).
|
| Figure 2 |
MAXIMUM
CURRENT (A) (a)
|
 |
MAXIMUM
CURRENT (A) (b)
|
 |
MAXIMUM CURRENT
(A)(c)
|
 |
|
| Comparisons of
maximum-current capability with body-diode
conduction at switching levels of 120V (a), 240V
(b), and 480V (c) reveal that even at 100 kHz an
IGBT can handle more current than power MOSFETs
two sizes larger. |
| Figure 3 |
MAXIMUM
CURRENT (A) (a)
|
 |
MAXIMUM
CURRENT (A) (b)
|
 |
MAXIMUM CURRENT
(A)(c)
|
 |
|
| Comparisons of
maximum-current capability with external
antiparallel-diode conduction at switching levels
of 120V (a), 240V (b), and 480V (c) show that at
50 kHz, an IGBT can handle more current than the
same-size power MOSFET. At 100 kHz, a power
MOSFET can handle more current. |
| Figure 4 |
MAXIMUM
CURRENT (A) (a)
|
 |
MAXIMUM
CURRENT (A) (b)
|
 |
MAXIMUM CURRENT
(A)(c)
|
 |
|
| Comparisons of
maximum-current capability with no
antiparallel-diode conduction at switching levels
of 120V (a), 240V (b), and 480V (c) show that an
IGBT can handle more current in some situations
(120V switching at 100 kHz) and a power MOSFET
can handle more current in others (both 240 and
480V switching at 100 kHz). |
| Back |
