Hynix-ST JV to sell 200-mm equipment from Wuxi fab
By Ann Steffora Mutschler, Senior Editor -- EDN, September 6, 2007
The Hynix and STMicroelectronics’ DRAM and NAND joint venture, Hynix–ST Semiconductor Ltd., has inked a deal to sell the equipment from its 200-mm C1 line in the Wuxi, China plant to Chinese conglomerate China Resources Holdings Co. Ltd. (CRH), the companies reported today.
Financial details of the contract have not been released.
Hynix said it has considered various ways to utilize existing 200-mm in line with its plan of expanding 300-mm capacity, which includes upgrading some 200-mm lines to boost efficiency, in order to continuously produce chips, while others will be sold.
In October 2006, ST and Hynix officially opened the doors of this joint front-end memory-manufacturing facility in Wuxi City, Jiangsu Province, China.
And in May, Hynix increased its investment in the joint venture, which in turn lowered STMicroelectronics' equity investment to 16.6 percent, from 33 percent.
