Samsung’s 90nm XDR Plays in PS3
Online staff -- EDN, May 18, 2005
Following a stream of support for Sony’s upcoming Playstation 3, Seoul, South Korea-based Samsung Electronics Co. Ltd. today joined the endorsements as it reported its next-generation 90nm 512Mbit eXtreme Data Rate (XDR) DRAM would be adopted, as well.
Samsung said it has produced its first production samples of the multimedia-focused XDR DRAM, based on Rambus’ XDR memory interface technology, which can transmit data at a rate of up to 9.6Gbits/sec., reportedly 12 times faster than DDR400 memory and six times faster than leading RDRAM (PC 800) devices.
The memory device is aimed at broadband applications that need advanced digital imaging or 3D graphics, such as the latest game consoles, digital TVs, high-end servers and premium workstations, and uses 90nm memory technology to achieve a peak operating speed of 4.8Gbits/sec. at 1.8 volts, the company also said.
“We have worked closely with Sony Computer Entertainment to assure that the next-generation computer entertainment system had what Sony Computer Entertainment wanted for the launch of Playstation 3: the fastest system memory with optimal thermal performance,” Yeong Ho Kang, VP of memory marketing at Samsung, said in a statement.
Further, Samsung’s 90nm 512MB XDR can support a variety of data input and output requirements and is to be available in x2, x4, x8 and x16 versions, the company said.
Rambus and Elpida memory have also announced XDR memory for the PS3.
