Hybrid emitter-switched transistor suits very high power applications
-- EDN, February 22, 2005
The hybrid STE59DE100 ESBT (emitter-switched bipolar transistor) STE50DE100 has a collector-source voltage of 1 kV and collector currents as high as 50A. The product combines bipolar and MOSFET technologies by reducing conduction loss like a bipolar and offering switching as fast as 150 kHz in accordance with MOSFETs. The product features a total power dissipation of 160W at 25°C, a maximum operating junction temperature of 150°C, and an insulation-withstand voltage of 2500V ac rms. The transistor comes in a screw-mounted ISOTOP package and costs $20 (1000).
STMicroelectronics, www.st.com
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