MOSFETs push figure of merit to 60% below existing value
By Bill Schweber -- EDN, December 11, 2003
A set of four MOSFETs from Vishay Siliconix pushes the traditional figure of merit—on-resistance time and gate-drain capacitance—to new lows. The lower on-resistance translates to improved efficiency and less heat in a smaller package; the lower gate-drain capacitance improves switching performance at high frequencies. Targeting 20A (Si4390DY and Si7390DP) and 40A (Si4392DY and Si7392DP) output-current designs, these MOSFETs are available in various SO-8 package versions.
Drain- and gate-to-source voltages are 30 and 20V, respectively; on-resistance is approximately 10 mΩ at 4.5V and 13.5 to 16.5 mΩ at 4.5V. Gate-drain capacitance is 10 nC at 4.5V; the figure of merit at that voltage is 135 to 165, depending on model and packaging. These MOSFETs sell for 55 cents each (100,000).
Vishay Siliconix, www.vishay.com.
