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Infineon launches new trench-type power MOSFET family

Rick DeMeis, Editor, EE Times' Automotive Designline -- EDN, September 12, 2011

Infineon has debuted a new family of single P-channel 40V automotive power MOSFETs produced using advanced trench technology. The new 40V OptiMOS P2 products claim improved energy efficiency, reduced CO2 emissions, and cost savings.

The new product family is said to offer the lowest RDS(on) P-channel 40V MOSFET in the automotive industry and provides currents from 50 to 180A in various standard packages (180A is a benchmark in P-channel technology).

Applied as high-side switches in automotive bridge applications, the P-channel 40V OptiMOS P2 products do not require additional charge pump devices, allowing for cost savings and improved EMI performance. In combination with PWM (pulse width modulation) control, the new devices offer a better thermal behavior and a better avalanche performance than N-channel MOSFETs. This makes them well suited for reverse battery protection and motor control applications in cars such as EPS (Electric Power Steering) motor controls, 3-phase and H-bridge motors (i.e. windshield wipers), electric parking brake, HVAC fan controls, and electric pumps (i.e. for water, oil, and fuel).

Cost and efficiency advantages are creating an industry trend towards trench-type MOSFET devices. Based on the second generation of Infineon’s trench technology, the OptiMOS P2 devices provide low gate charge, low capacitance, low switching losses, and high currents and FoM specifications (Figure of Merit, RDS(on) x Qg) for efficiency in electrical motors while minimizing EMC emissions. For example, an industry-wide RDS(on) of only 2.4 mΩ (at 10V in D2PAK packages) is one third less compared to alternative MOSFETs on the market, according to the company.

With the new P-channel 40V devices Infineon expands its product portfolio for motor controls with bridge configurations, which are widely used in automotive systems. Bridge configurations require MOSFETs both for the high-side and low-side. Compared to N-channel MOSFETs the new P-channel devices do not need an n additional charge pump to implement high-side switches that drive DC brush motors or brushless 3-phase DC motors. This leads to cost savings as P-channels can also be driven by a simple drive circuit. In the case of an H-bridge motor, savings is claimed on average between approximately 5 and 10%.

As an example, conventional hydraulic power steering is powered by the engine, which means the motor must be run continuously. With EPS, the motor is used only when necessary for assistance, which reduces fuel consumption. The replacement of hydraulic water and oil pumps by electrically controlled water and oil pumps also can make a vehicle up to four kilograms lighter which ultimately increases fuel efficiency. Electric pumps also are advantageous from an environmental viewpoint, since no oil needs to be disposed when vehicles are recycled. Additionally, electric water pumps are an absolute must-have for hybrid vehicles.

The OptiMOS P2 device packages are designed to withstand temperatures of up to 260C during reflow soldering at MSL1 (Moisture Sensitivity Level 1) and have lead-free plating for RoHS compliance. The power MOSFETs are fully qualified according to the specifications of Automotive Electronics Council (AEC-Q101).

Availability
The OptiMOS P2 40V family with 34 derivatives and current capabilities from 50 to 180A is in production now. Samples of all products are available in all standard power packages including TO-220, DPAK, D2PAK and TO-262, as well as in a 7-lead D2PAK. In very small volume sample quantities, the 5 mΩ OptiMOS P2 40V in a DPAK package, the IPD90P04P4-05, is priced at $1.43.

Further information
Further information on Infineon’s automotive power MOSFETs is available at www.infineon.com/automotivemosfet.

This article originally appeared on EE Times.
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