Renesas develops 40-nm embedded automotive flash memory
Peter Clarke, EE Times -- EDN, December 15, 2011
LONDON—Renesas Electronics has said it has developed a 40-nm embedded flash memory intellectual property for implementation at 40-nm and use in automotive applications.
The company said the technology would be included in automotive microcontrollers and be available as samples from Renesas in the second-half of 2012.
The technology offers 20 years of data retention and progam-erase endurance of 125,000 cycles, Renesas said. In addition the memory can be read at up to 170°C junction temperature and supports read speed clocking at up to 120-MHz. The memory is based on MONOS (metal oxide nitride oxide silicon) technology.
This story was originally posted by EE Times.
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