Transphorm announces GaN products at 600-V
Peter Clarke, EE Times -- EDN, February 7, 2012
LONDON—Transphorm Inc, a startup specializing in gallium nitride power ICs, has announced its first products, power diodes based on its patented, gallium-nitride technology rated at 600-V.
The products are three diodes with current ratings of 6, 4 and 2-amps, part numbered TPS2010PK, TPS2011PK and TPS2012PK, respectively. All three are housed in TO-220 packages.
Transphorm (Goleta, CA), founded in 2007, claims that the power diodes cut wasted energy by 20 percent but did not state what the power diode performance was being compared against. The company said it plans to demonstrate a dc-to-dc boost power converter that includes its GaN diodes operating at more than 99 percent efficiency at the Applied Power Electronics Conference and Exposition that takes place in Orlando, Florida, Feb 5 to 9.
Applications where Transphorm expects to make sales include: power supplies and inverters for solar panels and electric vehicles.
"Our EZ-GaN solutions also impact broad applications such as motor drive systems where our products provide 2 to 8 percent electromechanical efficiency gains," said Umesh Mishra, CEO of Transphorm, in a statement.
Transphorm entered the Silicon 60, EE Times' list of emerging startup companies at version 12.5, which is the subject of a detailed technology and employment digital edition which can be accessed via http://e.ubmelectronics.com/Silicon60/index.html.
This story was originally posted by EE Times.
