Low-noise amplifier tops 1.5-GHz gain bandwidth

National Semiconductor's VIP-10 complementary-bipolar trench-isolated silicon-on-insulator process produces high-speed circuits that demand comparatively modest supply currents. The LMH6624 wideband amplifier adds ultralow noise to the product line's list of attributes. When you configure the device for a 10-dB gain with ±2.5V supplies, the 6624 offers a 90-MHz, –3-dB bandwidth and 300V/µsec slew rate. Its typical input-noise voltage is 0.95 nV/, and the noise current is 2.3 pA/, both measured in a 1-MHz bandwidth. The combination of wide bandwidth and low noise is attractive for sense amplifiers; ultrasound preamps; tape-head amplifiers; and other high-speed, small-amplitude signal-conditioning applications in communications, medical, instrumentation, and audio.

The amplifier's second- and third-order harmonic distortion products are typically no greater than –60 and –78 dBc, respectively, measured with a 1-V p-p, 10-MHz carrier and a 100Ω load. The amplifier's maximum offset is less than 0.95 mV over temperature. The typical offset drift falls within 0.2 µV. National Semiconductor specifies the LMH6624 with ±2.5 and ±6V supplies. The maximum idle current is 18 mA over temperature in either case. The $1.67 (1000) amplifier is available in either SOT-23-5 or SOIC-8 packages.

National Semiconductor is also employing the VIP 10 process in fabricating nine other recently released high-speed op amps, including the $2.87 (1000) LMH6732 with a resistor-programmable bias that allows you to optimize the bandwidth/quiescent-current trade-off (Picture). The SOT-23-6-packaged device also provides a shutdown mode in which it draws 1 µA. You can get more information about all 10 of National's new high-speed op amps at www.national.com/appinfo/amps.

National Semiconductor, www.national.com.