Samsung intros 64-Gbit MLC NAND chip

By Colleen Taylor, Contributing Editor -- Electronic News, 10/23/2007

South Korea-based semiconductor technology giant Samsung Electronics Co. Ltd. today announced that it has developed what it claims is the world's first 64-Gbit multi level cell (MLC) NAND flash memory chip, using 30-nm process technology (wafer pictured below).

According to the company, a maximum of 16 64-Gbit flash devices can be combined to make a 128-GByte memory card that can store 80 DVD resolution movies or 32,000 MP3 music files.

In a statement released today, Samsung said that the development of the 30-nm class 64-Gbit NAND flash marks the eighth consecutive year that the density of memory has doubled and the seventh straight year that the nanometer scale has improved for NAND flash since the 100-nm 1Gbit NAND chip was developed in 2001.

Samsung said that the new device was developed using a new manufacturing process called self-aligned double patterning technology (SaDPT). In SaDPT, the first pattern transfer is a wider-spaced circuit design of the target process technology, while the second pattern transfer fills in the spaced area with a more closely designed pattern. Samsung's SaDPT will employ existing photolithography equipment in 30-nm production, which is expected to be commercialized beginning in 2009.

Samsung said it has applied for 30 patents in connection with its new 64-Gbit flash device.