Feature

Achieving first-time success at 40 nm

An early adopter at the 40-nm node tells what it took to get results from this leading-edge process.

By Mojy Chian, Richard Cliff, and Jeff Watt, Altera Corp -- EDN, 6/12/2008

Sidebars:
BiModal-process-technology adoption
Analog challenges versus process-node shrinkage

Every process generation brings new design challenges, but, for the 40-nm node, both the difficulty and the risks are exceptional. Increased complexity, size, and design costs dictate that designers adopt new methodologies to ensure that they get it right the first time (Figure 1). Systematic use of test chips and enhanced statistical simulation are some keys to successfully addressing 40-nm-process-generation challenges.

Designers moving to adopt a 40-nm-process technology face substantial risks. The new process comes with new design challenges to address, and the penalty for error is high. Mask costs grow about 50% each generation, and, for the 40-nm process, they currently exceed $3 million. Equally important, the cost of the design effort is growing—more rapidly than mask cost—because of increasing gate count and chip complexity. Designers, therefore, need to adopt methods that will allow them to address both the financial and the technical challenges of process migration (see sidebar “Bimodal-process-technology adoption”).

One of the most important moves that design teams can make is to adopt a methodology of verifying blocks in silicon using test chips early and often during the design. Altera adopted this approach for the 90-nm generation and has carried it over to the 65- and 40-nm generations to achieve high success with first production silicon. The approach supports design reuse to save development cost and helps the design team understand and resolve new process-design challenges (see sidebar “Analog challenges versus process-node shrinkage”).

Test chips solve problems early

Test chips help address numerous design issues by validating both the circuit design and the process characteristics (Table 1). The first test chips, which designers run early in their efforts, can contain simple logic blocks and interconnects or single transistors. The design of these test chips can begin before the process and simulation models are stable, giving developers a head start on process migration. These tests help validate some design rules and indicate where other rules need modification, ensuring that the circuitry will perform as expected in the final design. Testing at this stage, however, requires design teams to work closely with their foundry to understand the deep-submicron issues that arise.

Test chips also help to account for new deep-submicron effects that arise with a change in technology node. Sometimes, these new effects become more apparent in actual circuits than they were in simple process-test structures. Then, a test chip behaves unexpectedly. By undertaking a correlation exercise, the design team can help identify effects they had not previously understood. Test chips can also identify circuit sensitivity to effects that the designers knew about but did not fully appreciate.

Later in the design process, when all important effects are known and when the design rules are more stable, test chips allow designers to evaluate larger blocks. At this stage, teams can also try to reduce design layouts or new layouts of logic designs to determine whether they function adequately in the new process. The results of such tests help teams define their strategy for both hard- and soft-design reuse to save development time and cost. If functional problems appear or the block’s performance needs improvement, designers have an opportunity to make the necessary changes early in the project. Blocks that traditionally need fine-tuning include memories, PLLs (phase-locked loops), and high-speed I/Os. They are prime candidates for testing at this stage.

As the design progresses, test chips allow designers to evaluate the integration of blocks into larger structures. The chips also provide an opportunity to evaluate any modifications the team made as a result of earlier testing. Depending on how many test chips they run during the development effort, designers may have several opportunities to repair or enhance their blocks before the design becomes final. Altera’s development efforts may involve as many as nine test chips during a product design, typically every three to four months.

This use of test chips greatly increases the chances for first-time success when you fabricate the full design, but the approach might appear costly at first because it involves so many mask sets. Collaboration with the foundry as well as the use of shared-cost programs, such as the TSMC (Taiwan Semiconductor Manufacturing Co) Shuttle program, however, can keep down the cost of test chips. During process development, for instance, the foundry must run numerous test wafers to fully characterize and tune its fabrication methods. It also periodically runs test wafers to monitor the process. A close working relationship with the foundry provides opportunities to piggyback simple test structures on the foundry’s own wafers in the early stages of a design. The Shuttle and similar programs allow testing of larger structures or even full designs. A 3×4-mm die in a 40-nm shuttle costs less than 5% of a full mask set, allowing several iterations of the final design for less than the price of one production-mask-set revision. The total mask cost of the test-chip program may exceed the cost of one mask-set revision, but the design-effort efficiencies you gain in areas such as design reuse and early error detection can largely offset the test costs.

Along with adopting new design methodologies such as the test-chip program, developers embracing 40-nm technology need to enhance their methods and design parameters. Three areas that are particularly important in this process generation are process variability, power management, and high-performance analog. Although these problems are well-known in earlier process generations, 40-nm technology puts a unique spin on them.

Local variability becomes significant

Chip developers have long been aware of and have accommodated process variability at the chip level. Monte Carlo statistical simulations guide designers in creating chips that will work properly when their transistors vary as much as three standard deviations (three sigma) from the production mean. But these techniques address only wafer-to-wafer variations and chip-to-chip variations within a wafer. In a 40-nm process, features are so small that the placement of individual atoms can have a measurable impact. Gate oxides, for instance, are now only a few atoms thick. You can no longer consider the dopant in transistor channels relatively uniform. Instead, the placement more closely resembles a dash of salt grains scattered across a plate, on which each outlined square is one random distribution with an expected value of 50 dopant atoms (Figure 2). The actual number of atoms—37, 45, and 60, respectively—for these three trials shows that, in addition to having a random spatial distribution, the total number of atoms within each square varies.

This dependency on individual atomic placement introduces an unprecedented degree of local variability to circuit behaviors. Robust statistical-analysis and modeling tools, which accurately account for local variation, enable designers to optimize their circuits in the presence of local variability. The ability to accurately model local variation is especially critical for the design of high-yielding memory and analog circuits. For parameters such as standby current, only the total current across a die is valuable. In this case, local variations above or below the average tend to cancel each other out.

In addition to designing for greater variability, developers should begin to incorporate redundancy to improve chip yields. This step is particularly important for the large dice of today’s complex designs. With a large die, even a small change in the defect density in production can have a major impact on yield. On-chip redundancy allows the design to bypass defects instead of simply failing. You need to weave this redundancy into the architecture at the circuit level, however, not add it as an afterthought.

Developers should also consider lowering the circuit power. As process technology shrinks, circuits become faster and denser, and chip power rises in proportion. For many applications, however, chip power is more important than performance. Many applications require more functions in next-generation chips without increasing power requirements, and higher performance holds only secondary importance.

The traditional approach to lowering power has been to lower the supply voltage to offset the greater number of transistors. But transistor-threshold levels do not scale with process technology, so lowering the supply voltage reduces the margin within which the transistor operates. Local variations further reduce that margin. The lower the supply voltage, the greater the significance of predicting and accounting for local variability—specifically, for threshold-voltage variations.

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Trading performance for power

In addition to lowering supply voltage, designers must adopt other approaches to reducing chip power. Altera has traded performance for power at both the transistor and the architectural levels. Increasing the threshold voltage of a transistor, for instance, slows it but reduces its leakage current. Similarly, increasing channel length slows a transistor but lowers its switching current. You can make numerous other such trade-offs at the transistor level.

At the architectural level, designers can trade performance for power on each circuit. In an ASIC design, this kind of trade-off is static. Analyzing the performance needs of a circuit identifies the critical paths on which high speed is necessary, allowing designers to assign faster transistors on those paths and use slower but less power-hungry transistors elsewhere. In an FPGA for which you don’t know the critical path before programming and in other applications in which circuit speed may vary, a more dynamic trade-off is necessary. Reverse-back-biasing a transistor increases the threshold voltage, thereby reducing the power. Design tools can automatically adjust the back bias of the transistors based on a specific program to optimize speed and power.

The mixed-signal problem

Finally, designers must address the challenges of mixed-signal design. Many devices now need to incorporate high-speed transceivers. Even for purely digital logic, analog and high-frequency circuit content is increasing to support such functions as high-speed serial I/O. Successful implementation of such functions requires circuit components optimized for high-speed-analog-circuit design, but their requirements are often at odds with the requirements for high-speed-digital-circuit components. This discrepancy is becoming more pronounced as process technology scales down.

The key to solving this dilemma is working closely with the foundry early in process development to ensure adequate optimization of the essential components for high-speed-analog design. Developers can also populate a significant portion of their test chips with analog components to help develop accurate simulation models. Placing one whole channel of a high-speed transceiver on a test chip, for instance, gives an opportunity to evaluate the parasitic effects of interconnects; model on-chip resistors, capacitors, and inductors; and see how well the design will work. This use of test chips allows designers to predefine analog components and fully characterize them to minimize mismatches in the final design.

Collectively, all these efforts addressing analog design, power trade-offs, local variability, and the use of test chips work together to ensure first-time success in 40-nm design. Further, the methods that address these problems will be applicable when it comes time to make the next process migration. New technical challenges will arise, but the methodology provides the opportunities to resolve those challenges, keep costs down, and achieve success with first production silicon.


Author Information
Mojy Chian is vice president of technology development at Altera Corp. His responsibilities include process-technology definition, implementation, and design infrastructure for new technologies, as well as yield improvement, defect-density reduction, and factory control for mature technologies. He holds bachelor’s, master’s, and doctorate degrees in electrical engineering as well as a master’s degree in applied math from the Florida Institute of Technology (Melbourne, FL).

Richard Cliff is vice president of IC design at Altera Corp. He has led the hardware development for the Stratix, Apex, and Flex device families and holds more than 100 patents in programmable logic. He has a bachelor’s degree from Manchester University (Manchester, UK).

Jeff Watt is a technology architect at Altera Corp, where he oversees compact-model development. He has master’s and doctorate degrees in electrical engineering from Stanford University (Palo Alto, CA) and a bachelor’s degree in electrical engineering from Queen’s University (Kingston, ON, Canada).

BiModal-process-technology adoption

The data in Table A shows the percentage of ASIC-design starts each year by process-technology node. Gartner gathered the statistics for 2007 and made projections for the future. Each column totals 100. The most popular design-process node has for some time been 0.13 microns—based on the fact that 0.13-micron designs offer enough integration density, performance, and reasonable NRE (nonrecurring-engineering) costs for most designs. Designs at 90 nm and beyond are more expensive and riskier, and they require careful power management. It is not easy to balance ROI (return on investment) for many ASIC designs. The right axis in the table includes Altera’s estimates for the total NRE cost for an ASIC at each node. These costs include masks; design; test; and software development, including labor, software, and hardware costs. As these costs increase, so do risk and development time.

Contrast this situation with FPGA development. A few years ago, when older technology was in use, FPGAs stayed behind the ASIC-technology curve. Today, FPGAs are ahead of the curve. In the future, there will be a three-process node or more process-technology advantage—invaluable for customers who may compare ASIC and FPGA technology for a given design. Examining cost, density, and performance, you can make no comparison between a 0.13-micron ASIC and 45- or 32-nm technology.

With only a small investment in software-development tools, customers can gain access to the latest process technology. These products are programmable and available to tens of thousands of customers, whereas an ASIC is available to only one customer. FPGAs maintain a better ROI, thus allowing the manufacturer to steadily invest in newer technologies. The ultimate result is that more designs will migrate from ASIC to FPGA technology, taking advantage of time to market, cost, performance, and power and significantly reducing risk and NRE costs.


Analog challenges versus process-node shrinkage

Analog design faces new challenges as silicon continues to scale down, including head room, gain, leakage, deep-submicron effects, modeling, variations, and mismatches.

Head room

Two forces drive supply voltage down. The EM (electromigration) and oxide-stress reliability considerations require low supply voltage. In addition, a lower supply voltage quadratically reduces power consumption for digital circuitry, based on the P=CV2f equation, where P is power, C is capacitance, V is voltage, and f is frequency.

Although low threshold voltage, VT, means a high switching speed for digital applications, the dramatic leakage increase adds substantial static-power consumption. Therefore, the threshold voltage does not decrease when you reduce the supply voltage. But a lower supply voltage and a stable threshold voltage reduce the signal head room, which creates a problem in some analog designs.

Lower head room can cause current-mirror errors because of more variation in matched circuits. Also, small signal swings degrade SNR (signal-to-noise ratio) and lower operational amplifier gain. Variations cause errors in other current-based analog parameters, such as output-drive-voltage swings.

Gain

You express amplifier gain as AV=GM/GDS, where AV is the gain, GM is the transconductance, and GDS is the output conductance. Scaling shows an increase in output conductance, whereas the normalized transconductance stays at about the same level, worsening GM/GDS, or gain. Transconductance is a critical parameter in analog design that requires custom analog devices.

Leakage

There are two types of leakage in a MOSFET. Drain-to-source-current leakage more greatly impacts digital design than analog due to a static-power-consumption increase in logic. Transistors in analog blocks normally are biased in saturation, and source-to-drain leakage is not a major concern.

Gate-tunneling-current leakage has a more severe impact on analog design. Gate leakage increases drastically when you migrate to a smaller process node. Reducing the gate-oxide thickness by the equivalent of one atomic layer increases the gate current by approximately one order of magnitude. Despite technological remedies, gate leakage is a critical consideration in analog design. This importance holds especially true for long transistors, in which gate noise increases, leading to increased jitter and increased mismatch between pairs of wide and long devices. Normally, the mismatch decreases as a function of the device area; however, the gate leakage offsets this common behavior.

Submicron effects

Both 65- and 40-nm-technology nodes have used strain technologies, resulting in device characteristics that become a function of many layout dependencies, such as LOD (length-of-diffusion) effects, WPE (well-proximity effect), and polysilicon-spacing issues.

Deep-submicron effects lead to new challenges. For transistor modeling to have an accurate feature size, the geometry extraction must take into account each device in relation to its surroundings. Because an individual device’s performance deviates from the ideal prelayout model, process-modeling engineers must develop complex layout rules to guide layout designers to reduce the number of postlayout iterations. Complex geometry extractions lead to complicated models in postlayout simulations, resulting in longer simulation and analog-design cycles.

High supply voltage

Analog design breaks down into two general categories: precision analog and high-speed analog. Higher voltages and thicker oxides best suit the precision-analog category, and lower voltages and thin oxides are best for high-speed analog. This dual-technology approach in analog design at the 40-nm node is essential to solving the head-room issue.

Channel length

Analog circuits use non-minimum-length transistors that have more balanced threshold voltage, transconductance, output conductance, linearity, and other relevant metrics. Mixed-signal design commonly uses transistors that have two to five times the minimum channel length.

Analog for FPGAs

To meet the increasing challenges of mixed-signal/analog design inside FPGAs using a standard logic-manufacturing process, analog transistors with specially tuned threshold-voltage, transconductance, output-conductance, and mismatch characteristics have successfully met the analog-design requirements. Designers created them to ensure adequate threshold-voltage head room for the analog operation at power-supply voltages that logic operations in the FPGA determine. Designers want to maintain the voltage head room by having the threshold voltage track with the supply voltage—which you need to operate the stacks of transistors typical of an analog design, such as the CMOS-cascode-current supply—and to maintain SNR integrity with low power.

During the engineering of these transistors, pay special attention to ensure high gain and good mismatch behavior. The analog transistors use optimized implants and analog parameters for the high-speed SERDES (serializer/deserializer) operation.




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