Zibb

Design Idea

Class AB inverting amp uses two floating-amplifier cells

Coupling optoisolators with one or more powerful discrete transistors yields almost-perfect floating-amplifier cells.

Joseph Wee Ting, Institute of Atomic and Molecular Sciences, Sinica Academy, Taipei, Taiwan; Edited by Martin Rowe and Fran Granville -- EDN, 3/19/2009

Transistors often find use as three-pin amplifier devices, in which the input and the output share one pin. Thus, the input and the output must have the same voltage at this pin. On the other hand, a four-pin amplifier could isolate the circuit's input and output. Using optoisolators, you can design a four-pin Class AB amplifier. Although the output voltage of an optoisolator curtails its usefulness, you can add discrete transistors to form an isolated amplifier.

See all of EDN's
Design Ideas

Figure 1 shows an example of a simple, 1-kV-p-p Class AB inverting amplifier that uses two identical floating-amplifier cells. The frequency response is dc to 20 kHz at full gain. You can achieve higher frequencies but at lower gains. The ratio of resistors R2 and R1 sets the gain. This circuit eliminates the need for many voltage-shifting components, which are typical of a standard circuit design. The positive and the negative cells are driven out of phase. The 15V and –15V and resistors R4 and R5 provide the necessary bias to guarantee that the output transistors are always on. Careful trimming of R4 and R5 can remove the output crossover distortion. Zener diodes D1 and D2 keep the optoisolator photodiodes back-biased at 6.2V. Resistors R10, R11, R12, and R13 supply some negative feedback to the output transistors. You must mount the four STW8N80 N-channel MOSFETs on suitable heat sinks to keep them cool. The circuit requires no active short-circuit protection. One pair of 125-mA currents across the high-voltage supply lines is sufficient to safeguard the circuit from destruction.

Figure 2 shows the square response at 10 kHz. There are no overshoots or undershoots, and the rising edge is almost antisymmetric with respect to the trailing edge. Figure 3 shows the sine-wave response at 20 kHz. Both outputs are 1 kV p-p.



Reed Business Information Resource Center

Featured Company


Related Resources

ADVERTISEMENT

ADVERTISEMENT

Feedback Loop


Post a CommentPost a Comment

There are no comments posted for this article.

Related Content

 

By This Author

There are no additional articles written by this author.


ADVERTISEMENT

Knowledge Center


Events

Oxford University Practical RF/Microwave Design Short Course
Dates: 1/18/2010 - 1/22/2010
Location: Oxford, United Kingdom

Phosphor Global Summit 2010
Dates: 3/23/2010 - 3/25/2010
Location: San Diego, CA

Submit an EventSubmit an Event




Technology Quick Links

EDN Marketplace


©1997-2009 Reed Business Information, a division of Reed Elsevier Inc. All rights reserved.
Use of this Web site is subject to its Terms of Use | Privacy Policy

Please visit these other Reed Business sites