Osram Opto Semiconductors announced lab results for a direct-emitting green-InGaN (indium-gallium-nitride)-laser diode. In pulsed-mode operation at room temperature, the laboratory prototype achieved an optical output of 50 mW, with a threshold-current density of approximately 9 kA/cm², emitting light in true green—defined by the spectral range of 515 to 535 nm—with a wavelength of 515 nm. The current technology for green semiconductor lasers is to double the frequency of a material capable of lasing at 1060 nm to produce a green laser at 531 nm. The highest output power for a frequency-doubling green laser is currently about 1.5W.

Osram developed the green-laser diode in conjunction with the German Ministry for Education and Research MOLAS research project, which involves technologies for ultracompact and mobile-laser-projection systems; green lasers also find use in a range of medical and research applications.

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