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Blog
Friday, December 8, 2006
STMicroelectronics STD11NM60N: High-efficiency power MOSFET drives high currents at low VGS
Dec 8 2006 1:30PM | Permalink |Comments (0) |
Providing a 450-mΩ maximum on-resistance, the high-efficiency STD11NM60N power MOSFET features an energy-optimized driver circuit that enables the MOSFET to drive higher currents at a lower voltage-gate threshold. Maintaining a 2V threshold spread, the range of the voltage-gate threshold is lower, providing high noise immunity and preventing the circuit from accidental turn-on. Suiting lighting applications such as high-power factory electronic ballasts and HID (high-intensity-discharge)-lamp electronic ballasts, the 600V STD11NM60N costs 90 cents (10,000).
STMicroelectronics, www.st.com
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