Zibb

Aaron Hand’s blog brings you analysis and insight into the world of semiconductor lithography, looking at the stories behind the developments that shape this industry.



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Wednesday, April 23, 2008

EUV at 16? Intel Still Pushing

Apr 23 2008 9:03PM | Permalink |Comments (8) |


When Intel speaks, people are generally interested. And when the überchipmaker says it won’t be using EUV lithography to introduce 22 nm technology into its chips, people take notice. And so, like many others, I was quick to click on yesterday’s headline, “Intel: ‘EUV Facts Don’t Add Up’ for 22 nm in 2011.” It’s somewhat early still, but so far the article has garnered close to 3× as many page views as the next most popular article on our site this week (a story about Hynix cutting its capital spending, in case you’re interested). I’m not surprised, and actually went to our web analytics tool today specifically to confirm my suspicions.

 

In fact, the interview that my colleague David Lammers did with Senior Intel Fellow Mark Bohr was pretty interesting. But the statement from Bohr that Intel will not be able to make use of EUV by 2011 should not be at all surprising.

 

EUV lithography still faces several daunting challenges, including achieving defect-free masks, high-power sources with reasonable lifetimes, and improved resist sensitivity. With all that needs to be done, nobody thinks that EUV will be ready for volume production by 2011, as Bohr points out.

 

But what I do continue to find surprising is that Intel — as well as other key chipmakers — is still counting on EUV to come through later in the 22 nm generation, “or maybe 16 nm.” Maybe 16 nm? Aren’t we getting to a point, then, when standard CMOS scaling really comes into question? If we’re really talking about EUV not even being put into volume production until 16 nm, how long are we then even going to be able to keep it around?

 

Granted, the timeframe in which Intel introduces what it calls its 22 or 16 nm generation is not exactly on par with the timeframe or even physical dimensions of other chipmakers. But the industry seems to be nonetheless clinging to an awful lot of faith that EUV is eventually going to come through for them.

 

After reading yesterday’s news item, one reader commented, “More effort should be on alternatives to EUV than on resuscitating it.” If Intel can make it to 22 nm by extending 193 nm immersion lithography with “various techniques,” easier alternatives ought to be able to take the industry as far down traditional scaling paths as possible.

 

Of course, there are no easy answers — EUV, or otherwise. The EUV community has introduced another conference to the standard mix, with the International Workshop on EUV Lithography coming up in June in Maui, in addition to the EUV Symposium in the fall, this year in Lake Tahoe, Calif. What I’ve heard about the newly added EUV workshop was that Vivek Bakshi was trying to put something together that was more workshop-like (thus the name). I’m interested to see how it turns out. Obviously, there is much to be done still on EUV, and the more the industry can cooperate, the better.


Related entries in: Chip Production | Extreme Ultraviolet (EUV) | Lithography | Next- Generation Lithography (NGL) | Semiconductor Production & Manufacturing | Topical Taxonomy--Electronics | 


Reader Comments



at 4/25/2008 2:13:52 PM, Mask Repair Guy said:
What is this about needing defect free masks for EUV to be viable? Are current masks always 100% defect free? Mask repair can be done at all stages of the EUV mask manufacturing process. Look at the literature. Why is the industry so unwilling to admit there is such a thing as mask repair technology?



at 4/25/2008 3:51:17 PM, response said:
As a former supporter of EUV who did a lot of homework afterwards, I have to say that a lot of things do not work for EUV.

The multilayer mirrors in an EUV system each absorb ~30% of the incident light. This is far more than can be tolerated for a lens in any conventional optical system. 157 nm optics required CaF2 because of the absorption issue. Of course that contributed to its demise.

It takes 14 times more energy to generate an EUV photon than a 193 nm photon. At the same time you need to make more EUV photons to make up for the absorption mentioned earlier. No wonder sources are an issue since energy consumption just for demonstration means a significant number of kilowatt-hours. Not so green.

Since the multilayer optics and masks absorb EUV, obviously they will heat up. In the vacuum of the EUV system, there is not much opportunity for cooling. The thermal budget is tighter than before. While they won't visibly warp, the distortion to imaging can still be significant.

The defect issue cannot be downplayed or covered up. A few monolayers of contamination on the surface is enough to be printable, yet it will be undetectable by DUV inspection and repair only generates more such contamination.

EUV resists never image the EUV light. The EUV light generates free electrons in the resist, which are themselves quite fast and lose energy only by generating more free electrons. After the electrons have all stopped moving, the extent of damage easily exceeds 30 nm. And now you consider the acid generation and diffusion after the damage. It is no surprise the image is still easily blurred and the lines come out rough due to the loss of contrast.

Some problems for EUV are shared by other alternative lithographies but others are strictly EUV-specific.



at 4/26/2008 2:57:45 PM, OpenEyed said:
EUV reminds me of supersonic aircraft. Billions of government and corporate dollars (francs, pounds, etc)were poured into it, endless delays, missed premieres, but so many had so much invested in it, no one dared say the emperor had no clothes. If EUV is actually delivered(which is highly unlikely but who in the supply chain will have the courage to admit it?), it will meet the same fate as the Concorde: fly only incredibly wealthy passengers for a few highly unprofitable years, then sadly crash and burn. I'd invest in imprint: its problems are actually solvable now, and its durable and extendible.



at 5/15/2008 5:37:42 AM, Bernd Nikolaus said:
Please don't confuse technology nodes! 22nm for Intel is not the same litho step as for NAND fash memory device makers. The critical resolution requirement for printing MPU pattern is more relaxed.



at 5/15/2008 3:15:57 PM, Fred Chen said:
256 Gb 20 nm charge trap NAND flash in 2010 from Samsung. 1Tb 10 nm in 2012?



at 5/18/2008 7:26:04 PM, history repeats said:
With the immersion story, it proves that the industry can insert an alternative solution very quickly (in this case 3-4 years). So I won't be surprised if it happened again. Maybe it will be high-index, maybe it will be nanoimprint this time.



at 5/19/2008 8:50:44 AM, guest said:
Scientists and students agree that when a EUV photon (92 eV) is absorbed, it generates a photoelectron ~ 80 eV. EUV becomes 80eV electron lithography. The electron of course leaves the area very fast in a random direction with no memory of its origin. I don't think this technology will last, especially with nanoimprint getting more popular while being much cheaper.



at 5/23/2009 10:29:16 AM, Pamelaherb said:
I just love your weblog! Very nice post! Still you can do many things to improve it.

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