SiN and SiC transistor research grant from NIST

The advanced technology program at the national Institute for Standards and Technology has granted a research project to Velox Semiconductor. The 2 million dollar grant will help Velox fund research into silicon nitride and silicon carbide FETs. The use of these high-bandgap semiconductors will lower the on resistance and speed up the switching speed. Cornell University will provide design assistance. It is expected the FETs could be used in electric car projects to improve the poor efficiency of high current motor controllers.