Infineon Technologies OptiMOS3 M: N-channel MOSFETs suits mobile-system applications
December 6, 2007
Aiming at dc/dc-converter applications for mobile electronics, the 30V OptiMOS3 M series N-channel MOSFET family targets applications with a 5V drive. The BSC100N03MS G with a 10-mΩ on-resistance provides an 11-nC maximum gate-charge rating. Available in a 30-mm2 SSO8 (SuperSO8) package or in a 3×3-mm S3O8 (shrink SuperSO8) package, the SSO8 achieves a 2-mΩ on-resistance at 4.5V, and 1.6-mΩ on-resistance at 10V, and the S3O8 achieves a 4.3-mΩ on-resistance at 4.5V and 3.5-mΩ on-resistance at 10V. The SSO8 OptiMOS3 M series costs 88 cents for the 1.6-mΩ device; the S3O8 packaging costs 56 cents for the 3.5-mΩ device.
Infineon Technologies, www.infineon.com
Posted by EDN Staff on December 6, 2007 |
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