MOSFET driver claims high power efficiency

Targeting server and dc/dc-power systems, the high-speed, synchronous, 4A TPS28225 MOSFET driver features 14-nsec adaptive dead-time control, 14-nsec propagation delays, a 2A source drive, and a 4A sink drive. Suiting N-channel complementary-driven power MOSFETs, the driver controls MOSFET gates with 4.5 to 8.8V, and the vendor claims a 7 to 8V power efficiency. A 0.4Ω impedance for the lower gate driver holds the gate of the power MOSFET below its threshold level, ensuring no shoot-through current occurs during high dV/dT phase-node transitions. An internal diode charges a bootstrap capacitor, allowing the use of an N-channel MOSFETs in half-bridge configurations. Available in SOIC-8 and thermally enhanced 3×3-mm DFN-8 packages, the TPS28225 costs 60 cents (1000).

Texas Instruments, www.ti.com