STMicroelectronics STD11NM60N: High-efficiency power MOSFET drives high currents at low VGS

Providing a 450-mΩ maximum on-resistance, the high-efficiency STD11NM60N power MOSFET features an energy-optimized driver circuit that enables the MOSFET to drive higher currents at a lower voltage-gate threshold. Maintaining a 2V threshold spread, the range of the voltage-gate threshold is lower, providing high noise immunity and preventing the circuit from accidental turn-on. Suiting lighting applications such as high-power factory electronic ballasts and HID (high-intensity-discharge)-lamp electronic ballasts, the 600V STD11NM60N costs 90 cents (10,000).

STMicroelectronics, www.st.com