Infineon Technologies AG OptiMOS 3: N-channel MOSFETs provide improved power density
The OptiMOS 3N-channel MOSFETs claim as much as 50% better power density than standard-transistor-outline packages. Targeting synchronous-rectification applications in server switch-mode power supplies, the 40, 60, and 80V SuperSO8 devices deliver D2-Pak on-resistance values of 1.8-, 2.8-, and 4.7-mΩ, respectively, with a 20% reduction in space requirement. The packages feature 0.5-nH inductance, reducing ringing under switching conditions. The 1-mm-high MOSFETs have a 16K/W junction-to-topside thermal resistance, making them suitable for use in devices implementing topside cooling in embedded systems or PCB-based modules for vertical placement in 3-D integrated systems. The devices are available in SuperSO8 and Shrink SuperSO8 packages; the 60V SuperSO8-packaged OptiMOS 3 costs 99 cents.
Infineon Technologies AG, www.infineon.com
