PCM: If Not Now, When?
Numonyx makes Flash memory. The company fused the Flash expertise of STMicroelectronics and Intel when it was formed last year. So you’d think that the company’s CTO Ed Doller would be happy to be king Flash of memory mountain. Not so. Numonyx and Doller have been making noise, lots of noise including keynotes at the recent Denali MemCon and at last week’s Flash Memory Summit, about how Phase Change Memory (PCM) is the “next big thing” in non-volatile memory. The graph below, taken from a White Paper just written by analyst Jim Handy (at Objective Analysis) and snagged from a pointer on the Numonyx Web site, shows why there are questions about NAND Flash’s continued scalability.

The graph shows that at the most recent lithographies in the 30-40nm range, NAND Flash bit cells are trapping less than 100 electrons in the bit-cell’s floating gate. If those cells are holding two, three, or even four bits per cell, then we’re talking 20-30 electrons per bit, heading towards 10. I don’t know about you, but it sure scares me to store one of my system’s valuable bits with one or two dozen electrons. I learned in college that those electrons are pretty small and although it was a long time ago, I think they’re still considered pretty small.
Some pundits, including the text in Handy’s White Paper (which is excellent and well worth reading if you’re at all interested in Flash memory), suggest that there may only be two or three scaling generations left in NAND Flash before there aren’t enough trapped electrons to make a reliable bit. Then what?
Then PCM, according to Numonyx. PCM stores bits as physical state changes in a material that can take both crystalline and amorphous forms. In the crystalline form, the material conducts electricity well. In the amorphous form, it doesn’t. The material is a chalcogenide glass, which is a less than helpful explanation. However, put a plug of the stuff between two electrodes with a heater. Fire a quick, high-heat pulse into the glass, let it cool, and it will cool to an amorphous, non-conducting state. Heat the glass to a lower, sub-melting temperature for a while and the glass will anneal into a crystalline, conductive state. Measure the resistance by energizing the two electrodes and you have a conductive/non-conductive memory cell.
Best of all, the activation energy is huge for this memory cell. Doller calculated that the activation energy of a PCM cell gives it a data-retention time of 200,000 years. I expect the chip’s metallization will be long gone before then, but compared to the shrinking endurance spec of advanced-generation Flash cells, PCM storage endurance is forever.
One other advantage of PCM is that it’s bit-writeable. Flash, being Flash, is a block-erased EEPROM device and the blocks have been getting bigger every few generations. Block erasure is the only way to reset a Flash bit once programmed and erasure takes a long time. Consequently, there’s a lot of write management associated with NAND Flash, and more with each new generation of Flash. Doller took great glee in explaining how to alter one bit of a NAND Flash cell:
- Read a 4Kbyte block with ECC
- Write the block to RAM
- Modify the appropriate bit in the RAM
- Locate a new NAND page to write the modified block
- Write the block to the new page
- Calculate and write the ECC for that page
- Mark the old page as dirty
- Eventually erase the old page
And now, the procedure for altering a bit of PCM:
- Write the new bit
There is a difference.
So let’s all run down to the PCM store and replace our creaky old NAND Flash with PCM, right? Not so fast. NAND Flash is the cost/bit leader in the memory market, by a lot. PCM with its unusual chalcogenide glass is not a simple process to run in existing IC fabs, so there’s still some work to do on manufacturability and manufacturing costs. Handy’s White Paper doesn’t show PCM catching up with the per-bit cost of NAND Flash any time in the next decade.
So for now, PCM costs more. But that doesn’t mean it doesn’t have a niche. I can think of one right away. I recently wrote about the impermanence of digital storage and that problem is certainly an issue for NAND Flash. You certainly can’t trust NAND Flash to hold your bits intact for more than 10 years (the industry standard) and realistically, you can’t expect deep-submicron NAND Flash to hold your data intact for more than a handful of years. PCM? 200,000 years. Sign me up for some Compact Flash cards based on PCM. I’ll gladly pay double for an archival digital film card. Wouldn’t you?
No MLC retention for PCM commented:
retention at 100 C commented:
PCM won't work - several reasons commented:
ECD Fan commented:
ECD Fan commented:
ECD Fan commented:
Let me guess... commented:
Todor Mitev commented:
Are you crazy? commented:
ECD Fan commented:
ECD Fan commented:
ECD Fan commented:
ECD Fan commented:
Steve Leibson commented:
nvm.expert@gmail.com commented:
This ECD Fan is an idiot commented:
PCM Fan commented:
Steve Leibson commented:
ECD Fan commented:
ECD Fan commented:
Steve Leibson commented:
MOS-incompatible commented:
nvm.expert@gmail.com commented:
ECD Fan commented:
cidbarca commented:















