New MOSFETS target server power supply efficiency

The APEC power conference is always sure to showcase power MOSFETs, and this year was no exception. In the interests of keeping this post to a manageable length, here’s the MOSFET coverage in two parts. Part 1: Business a usual: Smaller, faster, more efficient.

Infineon announced its newly available OptiMOS MOSFETs for use in new power supply designs, and a new DrMOS compliant driver module that targets Intels’ VRM (voltage regulator) applications. The high-speed power FETs come in packages as small as 3×3 mm.

Vishay also introduced a DrMOS product  SiC762CD that includes both MOSFET drivers and power transistors in a 6×6 mm device capable of up to 35A.

Continuing with the low-voltage power transistor theme, Toshiba announced its first two MOSFETs in its seventh-generation UMOS VII-H series, the TPCA8055-H and TPC8055-H.

Most of the new power transistor announcements followed a theme of this year’s APEC, that of improving efficiency in server-sized power supplies with outputs up to about 30A.

International Rectifier introduced 20V, 25V, and 30V MOSFETs in a tiny 5×6mm PQFN package for ORing and motor drive applications that require high current capability and high efficiency. The IRFH6200TRPbF has an R_ds(ON) of 1.15mOhm and a gate charge of 52 nC.

What, you say, didn’t IR have anything to talk about in the power power arena for dc/dc power supplies? Yes, indeed, and that is the topic for Part 2: Rumblings of Disruption: GaN power devices.