OSRAM develops direct-emitting green laser diode
OSRAM Opto Semiconductors announced lab results for a direct-emitting green indium-gallium-nitride (InGaN) laser diode. In pulsed mode operation at room temperature, the laboratory prototype has achieved an optical output of 50 mW, with the threshold current density at around 9 kA/cm², emitting light in true green with a wavelength of 515 nm. ("True green” light is defined by the spectral range of 515 to 535 nm.)
Currently, the existing technology for green semiconductor lasers is to use frequency doubling, where you take a material capable of lasing at 1060nm and double the frequency to produce a green laser at 531nm. The highest output power for a frequency-doubling green laser is currently about 1.5W.
OSRAM developed the green laser diode in conjunction with the German Ministry for Education and Research MOLAS research project which involves technologies for ultra-compact and mobile laser projection systems; Green lasers are also used in a wide range of medical and research applications.
Some follow-up questions for OSRAM: What is the steady-state lm/W figure for the lab results, and how much do they expect the current threshold density to drop? I’ll post here if any numbers are forthcoming.
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