Design provides single-port-to-dual-port SDRAM converter
Yu-Chieh Chen, Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, Taiwan; Edited by Martin Rowe and Fran Granville - March 3, 2011
In multimedia and video applications,
DRAM buffers large frames
in the image coding and decoding between
an image-sensing device and an
image-display device (references 1 and
2). It also plays a key role in image-frame-rate converters by matching the
displaying format of the monitor (Reference
3). Accessing dual-port SDRAM
is a complex task, especially when two
data read or write operations are occurring
simultaneously into a single-port
SDRAM during high-speed operation.SDRAM supports asynchronous control, performs reading and writing operations, and allows multiple CPUs to read or write in parallel. To reduce production costs and avoid complexity, engineers typically prefer conventional one-port SDRAM. You can, however, use an FPGA to convert a single-port SDRAM to function as a dual-port SDRAM.
The single-port-to-dual-port SDRAM
converter comprises two read-FIFO (first-in/first-out) and write-FIFO memory
blocks. A pair of read and write controllers
each control a read-and-write data
bus. Figure 1 shows the architecture of
the proposed converter, and Figure 2
shows the operating flow of the read-and-write
controller. The write controller first
stores the writing data in write-FIFO and
executes the SDRAM write command
when the WKO (write-keep-out) signal
falls to a low level, which means that the
read operation is complete. Meanwhile,
the RKO (read-keep-out) signal goes
high until the write operation is complete.
The procedure prevents the read
signal from occurring during the writing
operation.The read-data operation is similar to the write-data operation. The read controller first waits for the RKO signal to fall low if it is high when the read operation starts. The read controller then executes the read command and stores the data from SDRAM to read-FIFO memory. The read controller simultaneously pulls the WKO signal high until the read operation is complete. Figure 3 shows the hardware logic of the smart controlling strategy, which the following equation also describes:

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This strategy doubles the high-level
period of both the read operation,
or RKO signal, and write operation,
or WKO signal. These signals rise to
logic high before executing each read or
write operation. This step ensures that
the read operation does not interrupt
the write operation and that the write
operation does not interrupt the read
operation.Figure 4 shows the simulation waveform of the converter, which is a part of the image-sensing and -displaying sequence. The iSDRAM_Read signal is high, indicating that the SDRAM is performing a read operation. At the same time, the iSDRAM_Write signal is high during the SDRAM-writing operation. The iSDRAM_ReadKeepOut signal goes high before each iSDRAM_ Write signal and lasts two times longer than each iSDRAM_Write signal. This setup ensures that the writing command does not execute during the read operation. For the same reason, the read command doesn’t execute during the writing operation.

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