The future of IC design
3D stacked memories
BeSang’s 3D stacked memories integrate memory cells in the vertical direction atop standard complementary metal oxide semiconductor (CMOS) logic, therefore boosting memory density in the smallest possible footprint. Unlike 3D NAND, BeSang's 3D stacked-memory designs can be applied to almost any type for memory including DRAM, NAND- and NOR-flash. BeSang believes its architecture will expand silicon memories’ lifespan for at least 20 years after the end of Moore’s Law and maybe even to 2076.
BeSang's 3D Super-NOR is a thousand times faster than today's NAND on a NVDIMM.
In comparison with conventional designs, BeSang's 3D Super-NOR (pictured) is a thousand times faster than today's NAND on a NVDIMM. Also, it is significantly cheaper than DRAM and shows 1,000× better endurance compared to ordinary 3D NAND, according to BeSang. The technology has been successfully developed, licensed to Hynix, but is ready for product development by other IC houses too. On top of conventional memory logic, high density semiconductor memory cells using vertical pillar transistors are implemented with an extremely simple fab investment. BeSang claims products based on its reference designs could be introduced to the commercial market within two years and can be expected to serve the memory market for 20+ years, replacing HDD, SSD, and embedded cache memories for high performance CPUs, GPUs, and APs.
- 3D stacked memories
- Growing InGaAs transistor channels
- Neuromorphic cognitive computing chips
- Nanowire all-around gates
- 5G infrastructure and RF transistors
- Carbon nanotube transistors
- Through-silicon-vias becomes obsolete
- Superconducting niobium quantum computer
- 3D MEMS biometric detector
- Integrated nano-photonics technology