SiC MOSFET comes in TO-263 package
The C3M0075120J has a creepage distance between the drain and source pins of 7 mm, while an intrinsic diode offers low reverse recovery charge of 220 nC and reverse recovery time of 18 ns. In addition to a drain-source voltage of 1200 V, the part provides a continuous drain current of 30 A at 25°C, a maximum junction temperature of 150°C, and an output capacitance of 58 pF. The MOSFET can be used in renewable energy, electric-vehicle battery charger, high-voltage DC/DC converter, and switch-mode power supply applications.
The C3M0075120J SiC power MOSFET is available from distributor Richardson RFPD and costs $12.
C3M0075120J product page
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