EDN's 18th Annual Innovation Awards Finalists

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Category: Analog ICs
WINNER: BGA700L16, BGA734L16 low-noise amplifiers (Infineon Technologies AG)

Infineon has developed the BGA700L16 and BGA734L16 RF low-noise amplifiers with a proprietary silicon-germanium-carbon process. By combining this process with an innovative, low-resistance, on-chip ground contact, the silicon-based part outperforms gallium-arsenide parts.

The BGA734L16 for the 800-, 1900-, and 2100-MHz cellular bands has a 1.2-dB noise figure for the 2100-MHz band as well as 1-kV ESD (electrostatic-discharge) protection. The BGA700L16 targets use in wireless-LAN 802.11a/b/g/n applications. It has a noise figure of 1.3 dB in the 5.5-GHz band.