EDN's 19th Annual Innovation Awards Finalists

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Category: RFICs
Finalist: 0150SC-1250M and 0405SC-1000M RF-power transistors (Microsemi)

The new Microsemi 0150SC-1250M and 0405SC-1000M devices use SiC (silicon carbide) technology to resolve the problems with typical silicon-based RF power transistor solutions offered throughout the industry, such as BJT or LDMOS devices, which must use complex push-pull designs to achieve similar power levels, Microsemi reports. The devices—which target demanding RF pulsed power applications—are the first in a series of SiC RF power transistors Microsemi plans to bring to the market, utilizing the company’s new production capabilities. Microsemi's silicon carbide devices utilize new chip design and processing enhancements to offer high power, despite the small transistor and circuit size, over the specified frequency range, with 300 ƒÝs pulse width and 10% duty cycle. They are built with 100% gold metallization and gold wires in hermetically sealed packages. for the highest reliability in weather and long range radar applications.