EDN's 19th Annual Innovation Awards Finalists

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Category: RFICs
Finalist: HVV1011-300 RF-power transistor (HVVi Semiconductors)

The HVV1011-300 is the first device fabricated using the HVVFET architecture. The new vertical structure delivers frequency bandwidth, gain, and power levels that exceed the capabilities of commonly-used LDMOS and bipolar technologies, according to the vendor. From a systems perspective, the new HVVFET advantages in terms of gain, efficiency, and power density allow power amplifier designers to eliminate amplification stages, reduce parts count, and shrink PCB space requirements. Thermal management issues often dominate high power transistors, but the HVVFET benefits from the use of a small-footprint packaging approach that places the highest heat producing part of the die within microns of the device heat sink. At the same time, the technology’s thermal resistance and higher ruggedness increase reliability and allow radar and avionics designers to eliminate bulky and costly isolators and thereby significantly reduce system weight, size, and cost.