- Opinions and observations from the Professor
Webcast: Phase Change Memory - New Technology to Change Memory Usage Models
Mar 16 2010 8:20AM | Permalink | Email this | Comments (1)
In our previous webcasts, Numonyx has presented an overview of Phase Change Memory and discussed its unique reliability characteristics. Now, tune in to learn how PCM’s unique capabilities enable different system design approaches of existing memory usage models. The webcast will help viewers develop a deeper understanding of how memory system design can be enhanced, streamlined and simplified with this new technology.
Join us on Wednesday, March 17, 2010 at 2pm (EST) for this final 60 minute webcast of the Phase Change Memory webcast trilogy - "New Technology to Change Memory Usage Models". Registration is free.
The "Good Enough Moment"
Mar 10 2010 12:15PM | Permalink | Email this | Comments (2)
Thank you for the comment/question regarding the impact of magnetic interference on STT-MRAM. As the commentor points out, a strong magnetic field pulse can impact magnetic random access memory cells. Since STT-MRAM writing is done by spin-transfer torque switching instead of with a magnetic field, STT-MRAM requires less shielding than conventional MRAM. The EU standard on maximum magnetic field strength that electronic devices should be able to withstand is 12.6 Oe (Oe=approx 80 amperes per meter of flux path) under normal operation. One leading STT-MRAM company anticipates that a 1 or 2 micron layer of high-permeability material can be deposited directly on top of their chip to meet that requirement. The additional cost in the application mentioned would therefore be minimal and no extra bo... + read more
The Next Battle
Mar 1 2010 9:06AM | Permalink | Email this | Comments (6)
The New York Times posted an interesting article (For Chip Makers, the Next Battle Is in Smartphones) last week that follows the theme of my earlier blogs.
According to the author, the "chip wars" are entering a new phase as manufacturers fight to supply the silicon for one of the fastest-growing segments of computing: smart phones, tiny laptops and tablet-style devices. The author concludes that the new conflict is "about to become even more bloody" as the manufacturers and supporters of processor architectures choose sides. The turf being fought over is the architecture of mobile devices, and the argument that this is different from the previous processor battles is based on the observation that new components and technologies are targeting "smartphones and tabletlike devic... + read more
Market Entry Applications
Feb 23 2010 9:02AM | Permalink | Email this | Comments (4)
In a recent Professor Memory post, a challenge was made to identify a single specific application for a particular new memory technology. Under the assumption that the future market will contain a decreased emphasis on the desktop PC product concept of the past, and an increased emphasis on mobile applications, below are several possibilities:
PCM and Resistive Memory Technologies
While system designers will continue to find new opportunities to utilize the cost and performance attributes of NAND, IBM had a more stringent set of conditions in mind when it published two papers in June/September 2008. IBM observed "…the gap between the performance (measured as latency) of disks and the rest of the system—which is already five orders ... + read more
Makimoto’s Wave
Feb 16 2010 8:41AM | Permalink | Email this | Comments (4)
In response to a question to name a specific application for a particular memory technology, I responded that the value proposition of any technology is related to the specific end application and that therefore the market scenario had to be first identified.
One possible scenario is that nothing changes from today in which existing applications were designed with the specific cost/performance attributes of NAND and DRAM in mind. I agree with the argument that it will be difficult for new memory technologies to compete with NAND and DRAM in existing applications assumes that technology challenges of reducing storage mass for memory cells alone not be enough to sustain high volume growth for new and emerging technologies. Hard-working and clever engineers seem to have gotten us past one insurmountable barrier after another.
Another possible scenario begins... + read more
Micron Acquires Numonyx
Feb 11 2010 8:01AM | Permalink | Email this | Comments (2)
This transfer of Numonyx to Micron is an excellent opportunity for all parties for several reasons.
The support of STMicroelectronics and Intel was the best that could have possibly been provided to Numonyx’ PCM during the critical R/D phase. Deep pockets of funding combined with the technical depth of Intel and STMicro would be the ideal incubator for any emerging technology. It’s hard to believe that PCM would be anywhere near this level of development in any other set of circumstances.
However, based on Numonyx’ goal of sampling 45nm 1Gb parts by the end of this quarter, PCM is approaching the next step toward commercialization. The next critical stage includes introducing the design into a memory production environment, and Micron is in the best position to carry PCM along the rest of that route.
From Micron’s pe... + read more
NAND versus Future Memory Technologies
Feb 10 2010 8:35AM | Permalink | Email this | Comments (4)
Thank you for the comments to my last blog. To clarify, I believe we are talking about two different topics spread over two different periods, and I would divide the question into the market conditions of today and those of the near future. In the market conditions of today, the issue is the transition from NAND to any of the emerging nonvolatile memory technologies.
I agree with you that such a direct replacement of one technology by another technology in a single application usually only takes place if the cost-per-bit of the two technologies is similar. I also agree that condition is extremely unlikely in the case of any new semiconductor memory technology challenging any existing high-volume memory products.
I have commented in the past that I don’t expe... + read more
SiP and SoC - Part 2
Feb 4 2010 8:29AM | Permalink | Email this | Comments (2)
The market entry point of new memory technologies depends on how far the industry transitions away from the desktop PC model that so successfully drove DRAM into high volume. Here are three Intel-related recent examples that lead me to believe such a transition is well under way. Presenting the events in reverse chronological order makes for more dramatic story telling, but these events are essentially all taking place at the same time relative to the bigger time scale of semiconductor progress.
The first point comes from the announcement this week by IM Flash Technology, Intel’s joint venture with Micron, that the company was moving to a 25nm process for their NAND production. The closest competitor is Samsung’s 30nm process, which was previously available for their NAND and has just recently become available for Samsung&... + read more
SiP and SoC - Part 1
Jan 27 2010 1:07PM | Permalink | Email this | Comments (0)
Thanks for your comments on my recent blog post regarding advanced packaging technologies relative to emerging memory technologies. One point of view accurately described technical issues that still remain for advanced packaging technologies. Another perspective called attention to the fact that the upcoming International Interconnect Technology Conference has added a session focused on interconnection solutions for alternative memory technologies. There is clearly a lot of work to be done to broaden the base of advanced packaging technologies, and other sites and blogs are closely following that progress.
My interests in the advanced packaging technologies is the ability of those technologies to serve as a convenient market entry platfo... + read more
Webcast: Phase Change Memory Reliability Compared to Today’s Flash Memory
Jan 27 2010 8:38AM | Permalink | Email this | Comments (0)
Watch our latest on-demand webcast titled "Phase Change Memory Reliability Compared to Today’s Flash Memory". The discussion, led by Cliff Smith, Phase Change Memory Market Development Manager at Numonyx and Bob Merritt, Co-Founder and Partner at Convergent Semiconductors, focusses on the reliability comparisons of this new Phase Change Memory versus today’s flash memory technologies. The webcast includes an in depth question and answer session with the live viewers. Registration is free.
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APPLICATION NOTE: Numonyx® Forté™ N25Q 3V 128 Mbit Multiple I/O, 1.8V, Serial Flash Memory for Performance Applications
New, high performance serial flash memory from Numonyx. 128-Mbit, 3V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface. + read more.
APPLICATION NOTE: Using XiP Modes in the Numonyx® Forté™ N25Q Serial Flash Memory
Learn how to get more performance from your serial flash memory. Designing to use execute in place (XIP) mode with Forté N25Q can help increase system performance. + read more.
APPLICATION NOTE: How to Migrate to Numonyx® Forté™ N25Q Serial Flash Memory from Spansion
Learn how to migrate your design to Numonyx Forté N25Q Serial flash memory. + read more.
Numonyx® Phase Change Memory Demonstration
Watch this video demonstration to see how Phase Change Memory features of bit alterability, fast writes and non-volatility can help simplify and enhance your next design.
WHITEPAPER: Why Phase Change Memory Makes Sense for Reference Designs
Hardware reference designs help engineers accelerate development of next-gen solutions. PCM offers characteristics that deliver compelling advantages for storing updatable firmware in a reference design. + read more

