The future of IC design

-July 14, 2016

Growing InGaAs transistor channels


Source: IBM

IBM will be growing InGaAs transistor channels on future chips in the upward direction from a seed. Here a defect (left) starts the growth which continues growth across the wafer virtually defect-free. Next the ends are etched off, leaving a perfectly non-strained crystalline transistor channel (green) of III-V material atop a buried oxide (BOX) on a standard silicon substrate (no need for silicon on insulator--SOI) with a metal source, drain and gate (grey) using a high-k dielectric (red) all surrounded by an interlayer dielectric (yellow) of silicon dioxide.


Neuromorphic cognitive computing chips


Source: IBM

IBM's Neuromorphic Cognitive Computing Chip (left) measures about 3-millimeter square but has the ability to play (and win) against a human in computer games and can also read written letters, even when written by different hands. Using banks of IBM's TrueNorth neuromorphic supercomputing chips (right), the mixed-signal semiconductor in standard CMOS could replace the conventional digital computer by 2076.

Nanowire all-around gates




These transmission electron microscope (TEM) images of an NMOS GaAs FinFET show an overview of the silicon nanowire array (a) and a detailed view of two stacked silicon nanowires (b). The gate-all-around (GAA) n- and p-type MOSFETs are made of vertically stacked horizontal silicon nanowires with a diameter of only 8-nanometers. The devices, which were fabricated on bulk silicon substrates using an industry-relevant replacement metal gate process, have performance levels comparable to FinFET reference devices according to Imec, with shallow trench isolation (STI) densification at 750 degrees Celsius resulting in sharp silicon-germanium to silicon interfaces, which is essential for well-controlled silicon-nanowire release and to suppress the bottom parasitic channel.

Also see:

  1. 3D stacked memories
  2. Growing InGaAs transistor channels
  3. Neuromorphic cognitive computing chips
  4. Nanowire all-around gates
  5. 5G infrastructure and RF transistors
  6. Carbon nanotube transistors
  7. Through-silicon-vias becomes obsolete
  8. Superconducting niobium quantum computer
  9. 3D MEMS biometric detector
  10. Integrated nano-photonics technology


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