Transistor touts wideband operation
In a 2500 MHz narrowband test circuit, the AFG24S100HR5 provides a power gain of 16.0 dB CW (18.0 dB pulse) with drain efficiency of 64.2% CW (66.8% pulse). Other specifications include thermal resistance of 0.86°C/W and ruggedness of greater than 20:1 VSWR. The part is housed in a NI-360H-2SB ceramic flanged package and operates from a supply voltage of 50 VDC.
The NXP Semiconductor AFG24S100HR5 RF power transistor is available from Richardson RFPD at a single unit price of $498.40.
AFG24S100HR5 product page
Richardson RFPD, www.richardsonrfpd.com
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